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| P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.28 (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V Gate protect diode built-in High density mounting : SOT - 89 Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source u 1 G 2 D 3 S SOT - 89 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 + 20 -2.5 -10 -2.5 2 150 -55 to 150 UNITS V V A A A W O 1 2 P - Channel MOS FET ( 1 device built-in ) 3 Channel Temperature Storage Temperature C C O ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics Ta=25C PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 30 , Vgs = 0V Vgs = 20 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 1.5A , Vgs = - 10V Id = - 1.5A , Vgs = - 4.5V Id = - 1.5A , Vds = - 10V If = - 2.5A , Vgs = 0V - 1.0 0.11 0.2 2.5 - 0.85 - 1.1 MIN TYP MAX - 10 10 - 2.5 0.15 0.28 UNITS A A V S V Dynamic characteristics Ta=25C PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 280 200 90 MAX UNITS pF pF pF u Switching characteristics Ta=25C PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 1.5A Vdd = - 10V CONDITIONS MIN TYP 10 30 20 35 MAX UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a ceramic PCB MIN TYP 62.5 MAX UNITS C / W Electrical Characteristics Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current u Drain/Source On-State Resistance vs. Ambient Temp Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Electrical Characteristics Drain/Source Voltage vs. Capacitance Switching Time vs. Drain Current Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage u Standardized Transition Thermal Resistance vs. Pulse Width |
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